Reactive Ion Etching—PlasmaPro 80 ICP RIE

The PlasmaPro 80 ICP RIE from Oxford Instruments is a compact, small-footprint system that has been developed to provide adaptable ICP etch solutions with comfortable open loading. It is easy to site and user-friendly without compromising on process quality.

The open load design enables fast wafer loading and unloading and is also considered ideal for research, prototyping and low-volume production. It enables high-performance processes using optimized electrode cooling and excellent substrate temperature control.

Highlights

  • Open load design enables quick wafer loading and unloading
  • Outstanding etch control and rate determination
  • Low cost of ownership
  • Wafer temperature uniformity seems to be excellent
  • Up to 200 mm wafers
  • Constructed to Semi S2/S8 standards

Applications

  • Silicon Bosch and cryo-etch processes
  • III-V etch processes
  • Hard mask deposition and etch could be performed for high-brightness LED production
  • Failure analysis dry etch de-processing ranging from packaged chip and die etch through to full 200 mm wafer etch
  • SiO2 and quartz etch

Top dielectric layer removed, exposing four metal layers.

Top dielectric layer removed, exposing four metal layers. Image Credit: Oxford Instruments Plasma Technology

Top dielectric layer removed, exposing four metal layers.

Top dielectric layer removed, exposing four metal layers. Image Credit: Oxford Instruments Plasma Technology

Low damage FA etching in the ICP65.

Low damage FA etching in the ICP65. Image Credit: Oxford Instruments Plasma Technology

Features

  • Small footprint — Easy to site
  • Optimized electrode cooling — Substrate temperature control
  • Addition of < 500-millisecond data logging — Traceability and history of chamber and process conditions
  • High-conductance radial (axially symmetric) pumping configuration — Guaranteed enhanced process uniformity and rates
  • Clear ease of access to key components — Enhanced serviceability and maintenance
  • Close-coupled turbo pump — High pumping speed and outstanding base pressure
  • Laser end-point detection using interferometry — Evaluate etch depth in transparent materials on reflective surfaces (for instance, oxides on Si) or reflectometry for non-transparent materials (like metals) to determine layer boundaries
  • X20 control system — Increases data retrieval and delivers quicker, more repeatable matching
  • Fault and tool diagnostics via front-end software — Quick fault diagnosis
  • Optical emission spectrometry (OES) for large sample or batch process end-pointing — Identifying changes in etch by-products or depletion of reactive gas species, and for chamber clean end-pointing

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