Plasma Enhanced Chemical Vapor Deposition by PlasmaPro 80 PECVD

The PlasmaPro 80 from Oxford Instruments is a compact, small footprint system that provides versatile etch and deposition solutions with suitable open loading.

It is user-friendly and easy to site without compromising on process quality. Rapid wafer loading and unloading, suitability research, prototyping, and low-volume production are enabled by the open load design. It allows high-performance processes with the help of improved electrode cooling and outstanding substrate temperature control.

Highlights

  • Open load design enables quick wafer loading and unloading
  • Outstanding etch control and rate determination
  • Built to Semi S2/S8 standards
  • Outstanding wafer temperature uniformity
  • Up to 200 mm wafers
  • Low cost of ownership

Applications

  • Hard mask deposition and etch available for high-brightness LED production
  • High-quality PECVD of silicon nitride and silicon dioxide for photonics, passivation, dielectric layers, and several other uses

Plasma Enhanced Chemical Vapor Deposition by PlasmaPro 80 PECVD

Image Credit: Oxford Instruments Plasma Technology

Plasma Enhanced Chemical Vapor Deposition by PlasmaPro 80 PECVD

Image Credit: Oxford Instruments Plasma Technology

Features

  • Small footprint — Simple to site
  • High-conductance radial (axially symmetric) pumping configuration — Ensured enhanced process uniformity and rates
  • Optimized electrode cooling — Substrate temperature control
  • Clear ease of access to key components — Enhanced serviceability and maintenance
  • Addition of <500-millisecond data logging — Traceability and history of chamber and process conditions
  • Close-coupled turbo pump — High pumping speed and outstanding base pressure
  • Fault and tool diagnostics through front-end software — Quick fault diagnosis
  • X20 control system — Considerably increases data retrieval and offers quicker and more repeatable matching
  • Optical emission spectrometry (OES) is available for huge sample or batch process end-pointing — Detecting changes in etch by-products or depletion of reactive gas species, and for chamber clean end-pointing
  • Laser end-point detection using interferometry — Quantify etch depth in transparent materials on reflective surfaces (for instance, oxides on Si) or reflectometry for non-transparent materials (like metals) to identify layer boundaries

Other Equipment by this Supplier